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Title: Conversion of pure spin current to charge current in amorphous bismuth

Spin Hall angle and spin diffusion length in amorphous bismuth (Bi) are investigated by using conversion of a pure spin current to a charge current in a spin pumping technique. In Bi/Ni{sub 80}Fe{sub 20}/Si(100) sample, a clear direct current (DC) electromotive force due to the inverse spin Hall effect of the Bi layer is observed at room temperature under a ferromagnetic resonance condition of the Ni{sub 80}Fe{sub 20} layer. From the Bi thickness dependence of the DC electromotive force, the spin Hall angle and the spin diffusion length of the amorphous Bi film are estimated to be 0.02 and 8 nm, respectively.
Authors:
; ; ;  [1] ;  [2] ;  [3]
  1. Graduate School of Engineering Science, Osaka University, Osaka 560-8531 (Japan)
  2. Graduate School of Engineering, Osaka City University, Osaka 558-8585 (Japan)
  3. Department of Applied Physics and Chemistry, The University of Electro-Communications, Tokyo 182-8585 (Japan)
Publication Date:
OSTI Identifier:
22273856
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; AMORPHOUS STATE; BISMUTH; DIFFUSION LENGTH; DIRECT CURRENT; ELECTROMOTIVE FORCE; FERROMAGNETIC RESONANCE; HALL EFFECT; INTERFACES; IRON ALLOYS; LAYERS; NICKEL BASE ALLOYS; SILICON; SPIN; TEMPERATURE RANGE 0273-0400 K; THIN FILMS