Perpendicular magnetic anisotropy in epitaxially strained cobalt-ferrite (001) thin films

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4864048· OSTI ID:22273836

Utsumi, Y.; Inoue, J.; Kita, Eiji ^[1]

---

1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan)

We investigated the dependencies of both the magnetization characteristics and the perpendicular magnetic anisotropy of Co{sub x}Fe{sub 3–x}O{sub 4}(001) epitaxial films (x = 0.5 and 0.75) on the growth conditions of the reactive magnetron sputtering process. Both saturation magnetization and the magnetic uniaxial anisotropy constant K{sub u} are strongly dependent on the reactive gas (O{sub 2}) flow rate, although there is little difference in the surface structures for all samples observed by reflection high-energy electron diffraction. In addition, certain dead-layer-like regions were observed in the initial stage of the film growth for all films. Our results suggest that the magnetic properties of Co{sub x}Fe{sub 3–x}O{sub 4} epitaxial films are governed by the oxidation state and the film structure at the vicinity of the interface.

• OSTI ID: 22273836
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANISOTROPY
COBALT COMPOUNDS
CONCENTRATION RATIO
CRYSTAL STRUCTURE
ELECTRON DIFFRACTION
EPITAXY
FERRITES
INTERFACES
LAYERS
MAGNETIC PROPERTIES
MAGNETIZATION
REFLECTION
SPUTTERING
STRAINS
SURFACES
THIN FILMS
VALENCE