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Title: Spin-transfer switching of orthogonal spin-valve devices at cryogenic temperatures

We present the quasi-static and dynamic switching characteristics of orthogonal spin-transfer devices incorporating an out-of-plane magnetized polarizing layer and an in-plane magnetized spin valve device at cryogenic temperatures. Switching at 12 K between parallel and anti-parallel spin-valve states is investigated for slowly varied current as well as for current pulses with durations as short as 200 ps. We demonstrate 100% switching probability with current pulses 0.6 ns in duration. We also present a switching probability diagram that summarizes device switching operation under a variety of pulse durations, amplitudes, and polarities.
Authors:
; ; ; ; ;  [1] ;  [2] ; ; ;  [3]
  1. Department of Physics, New York University, New York, New York 10003 (United States)
  2. Raytheon BBN Technologies, Cambridge, Massachusetts 02138 (United States)
  3. HYPRES, 175 Clearbrook Road, Elmsford, New York 10523 (United States)
Publication Date:
OSTI Identifier:
22273821
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; MAGNETIZATION; POLARIZATION; PULSES; SPIN; TEMPERATURE DEPENDENCE; VALVES