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Title: Achieving perpendicular anisotropy in half-metallic Heusler alloys for spin device applications

Various full Heusler alloys are interfaced with MgO and the magnetic properties of the Heusler-MgO junctions are studied. Next to MgO, the cubic Heusler system distorts to a tetragonal one, thereby inducing an anisotropy. The half-metallicity and nature of anisotropy (in-plane or perpendicular) in the Heusler-MgO system is governed mostly by the interface Heusler layers. There is a trend that Mn-O bonding near the MgO-Heusler junction results in perpendicular anisotropy. The ability to remain half-metallic and have perpendicular anisotropy makes some of these alloys potential candidates as free-layers in Spin Transfer Torque Random Access Memory (STT-RAM) devices, particularly, Cr{sub 2}MnAs-MgO system with MnAs interface layers and Co{sub 2}MnSi-MgO system with Mn{sub 2} interface layers.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Center for Materials for Information Technology, University of Alabama, Tuscaloosa, Alabama 35401 (United States)
  2. Department of Physics and Astronomy, University of Alabama, Tuscaloosa, Alabama 35401 (United States)
  3. (United States)
Publication Date:
OSTI Identifier:
22273794
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; CHROMIUM COMPOUNDS; HETEROJUNCTIONS; HEUSLER ALLOYS; INTERFACES; LAYERS; MAGNESIUM OXIDES; MAGNETIC PROPERTIES; MANGANESE ARSENIDES; RANDOMNESS; SPIN; TORQUE