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Title: Templated fabrication and characterization of SiO{sub 2} nanotube covered Fe nanowires

In this study, Fe nanowires coated with SiO{sub 2} nanotubes have been synthesized by electrodeposition method using anodic alumina oxide template. Before growing Fe nanowires, 6–8 nm thick SiO{sub 2} nanotubes are grown inside the template using a “surface sol-gel” technique. The nanotube structures were characterized by field emission scanning electron microscopy and energy dispersive x-ray spectroscopy. Magnetic properties of the SiO{sub 2} insulated Fe nanowires inside the membrane are characterized by superconducting quantum interference device. Coercivities of around 120 Oe with field parallel to the nanowire axis and 240 Oe with field perpendicular the nanowire axis are observed at room temperature. These values are comparable to Fe nanowires without insulating layer in membrane. The magnetic hysteresis loop suggests that the SiO{sub 2} insulated nanowires have uniaxial magnetic anisotropy with the easy axis magnetization direction along the nanowire arrays due to their large shape anisotropy.
Authors:
;  [1]
  1. Ira A. Fulton Schools of Engineering, School of Electrical, Computer and Energy Engineering, Arizona State University, Tempe, Arizona, 85287 (United States)
Publication Date:
OSTI Identifier:
22273744
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; ANISOTROPY; COERCIVE FORCE; COMPARATIVE EVALUATIONS; ELECTRODEPOSITION; FABRICATION; FIELD EMISSION; HYSTERESIS; IRON; LAYERS; MAGNETIC PROPERTIES; MAGNETIZATION; NANOTUBES; QUANTUM WIRES; SCANNING ELECTRON MICROSCOPY; SILICON OXIDES; SQUID DEVICES; TEMPERATURE RANGE 0273-0400 K; X-RAY SPECTROSCOPY