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Title: Optimization of exchange bias in Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} Heusler alloy layers

We have fabricated and investigated IrMn{sub 3}/Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} stacks to meet the criteria for future spintronic device applications which requires low-temperature crystallisation (<250 °C) and a large exchange bias H{sub ex} (>500 Oe). Such a system would form the pinned layer in spin-valve or tunnel junction applications. We have demonstrated that annealing at 300 °C which can achieve crystalline ordering in the Co{sub 2}FeAl{sub 0.5}Si{sub 0.5} layer giving ∼80% of the predicted saturation magnetisation. We have also induced an exchange bias of ∼240 Oe at the interface. These values are close to the above criteria and confirm the potential of using antiferromagnet/Heusler-alloy stacks in current Si-based processes.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [4]
  1. Department of Electronics, University of York, Heslington, York YO10 5DD (United Kingdom)
  2. (Japan)
  3. Department of Electrical Engineering, Nagaoka University of Technology, Nagaoka 940-2188 (Japan)
  4. Department of Physics, University of York, Heslington, York YO10 5DD (United Kingdom)
Publication Date:
OSTI Identifier:
22273740
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; ANNEALING; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; COBALT BASE ALLOYS; CRYSTALLIZATION; HEUSLER ALLOYS; INTERFACES; LAYERS; MAGNETIZATION; SILICON ALLOYS; TUNNEL EFFECT