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Title: Switching efficiency improvement in spin torque majority gates

Spin torque majority gate (STMG) is one of the promising options for beyond complementary metal-oxide-semiconductor logic. Improvement of its performance—switching speed vs. required current—is critical for its competitiveness. In this paper, (a) we identify an optimized layout of the gate comprised of thin magnetic wires with in-plane magnetization; (b) we optimize geometries of perpendicular magnetization spin torque majority gates. Micromagnetic simulations demonstrate an improvement in switching current for in-plane magnetization (with less than 1 ns switching time) from 6 mA in the original scheme to 1.5 mA in the present one. Additionally, failures of switching caused by vortex formation are eliminated and desired output magnetization is achieved. Various geometries of STMG with perpendicular magnetization are explored. The scheme with a straight cross proves to be the most advantageous. It is predicted to operate with the switching current of 50 μA and less than 4 ns switching time.
Authors:
; ;  [1]
  1. Exploratory Integrated Circuits, Components Research, Intel Corporation, Hillsboro, Oregon 97124 (United States)
Publication Date:
OSTI Identifier:
22273732
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 36 MATERIALS SCIENCE; COMPUTERIZED SIMULATION; ELECTRIC CURRENTS; MAGNETIC MATERIALS; MAGNETIZATION; METALS; OXIDES; SEMICONDUCTOR MATERIALS; SPIN; TORQUE; VORTICES