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Title: Magnetization control for bit pattern formation of spinel ferromagnetic oxides by Kr ion implantation

As a first step toward the development of bit-patterned magnetic media made of oxides, we investigated the effectiveness of magnetism control by Kr implantation in a typical spinel ferromagnetic oxide, Fe{sub 3}O{sub 4}. We implanted Kr ions accelerated at 30 kV on 13-nm-thick Fe{sub 3}O{sub 4} thin films at dosages of (1–40) × 10{sup 14} ions/cm{sup 2}. Magnetization decreased with increase in ion dosages and disappeared when irradiation was greater than 2 × 10{sup 15} ions/cm{sup 2} of Kr ions. These dosages are more than ten times smaller than that used in the N{sub 2} implantation for metallic and oxide ferromagnets. Both the temperature dependence of magnetization and the Mössbauer study suggest that the transition of Fe{sub 3}O{sub 4} from ferromagnetic to paramagnetic took place sharply due to Kr ion irradiation, which produces two-phase separation—ferromagnetic and nonmagnetic with insufficient dosage of Kr ions.
Authors:
; ; ; ; ; ;  [1] ; ;  [2] ;  [3]
  1. Institute of Applied Physics, University of Tsukuba, Tsukuba 305-8573 (Japan)
  2. Department of Quantum Engineering, Nagoya University, Chikusa-ku, Nagoya 464-8603 (Japan)
  3. Graduate School of Engineering, Nagoya Institute of Technology, Nagoya 466-8555 (Japan)
Publication Date:
OSTI Identifier:
22273731
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; FERROMAGNETIC MATERIALS; FERROMAGNETISM; ION IMPLANTATION; IRON OXIDES; IRRADIATION; KRYPTON IONS; MAGNETIZATION; MOESSBAUER EFFECT; PARAMAGNETISM; PHASE TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; TEMPERATURE DEPENDENCE; THIN FILMS