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Title: Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

We demonstrated read and write characteristics of a three terminal memory device with a perpendicular anisotropy-free layer of a strip of [Co/Ni] and a low-switching perpendicular-anisotropy CoFeB/MgO sensing layer. This new design of the cell results in a small cell area. The switching magnetic field of the sensing layer can be decreased by changing sputtering gas for the Ta-cap from Ar to Kr. An electron energy-loss spectroscopy analysis of the cross-section of the magnetic tunneling junction (MTJ) revealed that the boron content in CoFeB with a Kr-sputtered Ta-cap was smaller than that with an Ar-sputtered one. A change in resistance for the MTJ was observed that corresponded to the magnetic switching of the Co/Ni wire and its magnetoresistance ratio and critical current were 90% and 0.8 mA, respectively.
Authors:
; ; ; ; ;  [1] ; ; ; ;  [2] ;  [3] ;  [2] ;  [4] ;  [4]
  1. Green Platform Research Laboratories, NEC Corporation, Tsukuba (Japan)
  2. Center for Spintronics Integrated Systems, Tohoku University, Sendai (Japan)
  3. Smart Energy Research Laboratories, NEC Corporation, Tsukuba (Japan)
  4. (Japan)
Publication Date:
OSTI Identifier:
22273716
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANISOTROPY; COBALT COMPOUNDS; CRITICAL CURRENT; ELECTRIC CONTACTS; ENERGY-LOSS SPECTROSCOPY; INTERFACES; IRON BORIDES; LAYERS; MAGNESIUM OXIDES; MAGNETIC FIELDS; MAGNETORESISTANCE; MEMORY DEVICES; SEMICONDUCTOR JUNCTIONS; SPUTTERING; TUNNEL EFFECT