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Title: Spin and valley transport in monolayers of MoS{sub 2}

We investigate theoretically quantum transport and Goos-Hänchen (GH) effect of electrons in a p-n-p junction on monolayers of MoS{sub 2}. We find that the transmission properties of spin-up (spin-down) electrons in K valley are the same with spin-down (spin-up) electrons in K′ valley due to the time-reversal symmetry. The GH shifts for the transmitted K and K′ beams in the n-p interface are in the opposite direction, and GH shifts for the spin-up and spin-down electron beams at the same valley have different values in the same direction due to the different group velocities. Therefore, the spin-up and spin-down electrons can be separated after passing a sufficiently long channel created by a p-n-p junction. These features provide us a new way to generate a fully spin- and valley-polarized current in monolayers of MoS{sub 2}.
Authors:
 [1] ;  [2]
  1. SKLSM, Institute of Semiconductors, Chinese Academy of Sciences, P.O. Box 912, 100083 Beijing (China)
  2. Department of Physics and Electronic Science, Changsha University of Science and Technology, Changsha 410004 (China)
Publication Date:
OSTI Identifier:
22273696
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON BEAMS; ELECTRONS; HETEROJUNCTIONS; INTERFACES; LAYERS; MOLYBDENUM SULFIDES; SPIN