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Title: Effect of antiferromagnetic layer thickness on exchange bias, training effect, and magnetotransport properties in ferromagnetic/antiferromagnetic antidot arrays

The effect of antiferromagnetic (AFM) layer on exchange bias (EB), training effect, and magnetotransport properties in ferromagnetic (FM) /AFM nanoscale antidot arrays and sheet films Ag(10 nm)/Co(8 nm)/NiO(t{sub NiO})/Ag(5 nm) at 10 K is studied. The AFM layer thickness dependence of the EB field shows a peak at t{sub NiO} = 2 nm that is explained by using the random field model. The misalignment of magnetic moments in the three-dimensional antidot arrays causes smaller decrease of EB field compared with that in the sheet films for training effect. The anomalous magnetotransport properties, in particular positive magnetoresistance (MR) for antidot arrays but negative MR for sheet films are found. The training effect and magnetotransport properties are strongly affected by the three-dimensional spin-alignment effects in the antidot arrays.
Authors:
; ; ;  [1] ; ;  [2]
  1. Shenyang National Laboratory for Materials Science, Institute of Metal Research, Chinese Academy of Sciences, Shenyang 110016 (China)
  2. Functional Materials Division, Korea Institute of Materials Science, 531 Changwon- daero, Changwon 631-831 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22273676
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ANTIFERROMAGNETIC MATERIALS; ANTIFERROMAGNETISM; ATOMIC FORCE MICROSCOPY; COMPARATIVE EVALUATIONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; LAYERS; MAGNETIC MOMENTS; MAGNETORESISTANCE; NANOSTRUCTURES; NICKEL OXIDES; SPIN; THICKNESS; THIN FILMS