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Title: Excitation and recombination dynamics of vacancy-related spin centers in silicon carbide

We generate silicon vacancy related defects in high-quality epitaxial silicon carbide layers by means of electron irradiation. By controlling the irradiation fluence, the defect concentration is varied over several orders of magnitude. We establish the excitation profile for optical pumping of these defects and evaluate the optimum excitation wavelength of 770 nm. We also measure the photoluminescence dynamics at room temperature and find a monoexponential decay with a characteristic lifetime of 6.1 ns. The integrated photoluminescence intensity depends linear on the excitation power density up to 20 kW/cm{sup 2}, indicating a relatively small absorption cross section of these defects.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [3] ;  [4] ;  [2] ;  [5]
  1. Institute of Physical and Theoretical Chemistry, Julius-Maximilian University of Würzburg, 97074 Würzburg (Germany)
  2. Experimental Physics VI, Julius-Maximilian University of Würzburg, 97074 Würzburg (Germany)
  3. Ioffe Physical-Technical Institute, 194021 St. Petersburg (Russian Federation)
  4. (Russian Federation)
  5. (ZAE Bayern), 97074 Würzburg (Germany)
Publication Date:
OSTI Identifier:
22273674
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION; CONCENTRATION RATIO; CROSS SECTIONS; ELECTRONS; EPITAXY; EXCITATION; IRRADIATION; OPTICAL PUMPING; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION; SILICON; SILICON CARBIDES; SPIN; TEMPERATURE RANGE 0273-0400 K; VACANCIES