Band gap narrowing in zinc oxide-based semiconductor thin films

Journal Article · Mon Apr 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4870709· OSTI ID:22273670

Kumar, Jitendra

A simple expression is proposed for the band gap narrowing (or shrinkage) in semiconductors using optical absorption measurements of spin coated 1 at. % Ga-doped ZnO (with additional 0–1.5 at. % zinc species) thin films as ΔE{sub BGN} = Bn{sup 1/3} [1 − (n{sub c}/n){sup 1/3}], where B is the fitting parameter, n is carrier concentration, and n{sub c} is the critical density required for shrinkage onset. Its uniqueness lies in not only describing variation of ΔE{sub BGN} correctly but also allowing deduction of n{sub c} automatically for several M-doped ZnO (M: Ga, Al, In, B, Mo) systems. The physical significance of the term [1 − (n{sub c}/n){sup 1/3}] is discussed in terms of carrier separation.

• OSTI ID: 22273670
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ABSORPTION
ALUMINIUM COMPOUNDS
BORON COMPOUNDS
CHARGE CARRIERS
CONCENTRATION RATIO
DENSITY
DOPED MATERIALS
ELECTRONIC STRUCTURE
ENERGY GAP
GALLIUM COMPOUNDS
INDIUM COMPOUNDS
MOLYBDENUM COMPOUNDS
SEMICONDUCTOR MATERIALS
SPIN
THIN FILMS
ZINC OXIDES