Growth and magnetic property of antiperovskite manganese nitride films doped with Cu by molecular beam epitaxy
- State Key Laboratory of Optoelectronic Materials and Technologies, School of Physics and Engineering, Sun Yat-Sen University, Guangzhou 510275 (China)
Manganese nitrides thin films on MgO (100) substrates with and without Cu-doping have been fabricated by plasma assisted molecular beam epitaxy. Antiperovskite compounds Mn{sub 3.6}Cu{sub 0.4}N have been grown in the case of Cu-doping, and the pure Mn{sub 3}N{sub 2} single crystal has been obtained without Cu-doping. The Mn{sub 3.6}Cu{sub 0.4}N exhibits ferrimagnetism, and the magnetization of Mn{sub 3.6}Cu{sub 0.4}N increases upon the temperature decreasing from 300 K to 5 K, similar to Mn{sub 4}N. The exchange bias (EB) effects emerge in the Mn{sub 3.6}Cu{sub 0.4}N films. The EB behavior is originated from the interfaces between ferrimagnetic Mn{sub 3.6}Cu{sub 0.4}N and antiferromagnetic metal Mn, which is verified to be formed by the data of x-ray photoelectron spectroscopy. The present results not only provide a strategy for producing functional antiperovskite manganese nitrides, but also shed promising light on fabricating the exchange bias part of spintronic devices.
- OSTI ID:
- 22273665
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 13; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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Related Subjects
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ANTIFERROMAGNETISM
COPPER COMPOUNDS
DOPED MATERIALS
FERRIMAGNETISM
INTERFACES
MAGNESIUM OXIDES
MAGNETIC PROPERTIES
MAGNETIZATION
MANGANESE
MANGANESE NITRIDES
MOLECULAR BEAM EPITAXY
MONOCRYSTALS
PLASMA
SUBSTRATES
TEMPERATURE DEPENDENCE
THIN FILMS
X-RAY PHOTOELECTRON SPECTROSCOPY