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Title: Quantitative comparison between Z{sub 1∕2} center and carbon vacancy in 4H-SiC

In this study, to reveal the origin of the Z{sub 1∕2} center, a lifetime killer in n-type 4H-SiC, the concentrations of the Z{sub 1∕2} center and point defects are compared in the same samples, using deep level transient spectroscopy (DLTS) and electron paramagnetic resonance (EPR). The Z{sub 1∕2} concentration in the samples is varied by irradiation with 250 keV electrons with various fluences. The concentration of a single carbon vacancy (V{sub C}) measured by EPR under light illumination can well be explained with the Z{sub 1∕2} concentration derived from C-V and DLTS irrespective of the doping concentration and the electron fluence, indicating that the Z{sub 1∕2} center originates from a single V{sub C}.
Authors:
; ;  [1] ; ; ;  [2]
  1. Department of Electronic Science and Engineering, Kyoto University, Katsura, Nishikyo, Kyoto 615-8510 (Japan)
  2. Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)
Publication Date:
OSTI Identifier:
22273637
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARBON; COMPARATIVE EVALUATIONS; CONCENTRATION RATIO; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON SPIN RESONANCE; ELECTRONS; IRRADIATION; LIFETIME; N-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SILICON CARBIDES; VACANCIES; VISIBLE RADIATION