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Title: Study of the confined states in Al{sub x}Ga{sub 1−x}As/GaAs/vacuum surface quantum well

In this paper, we investigate the optical properties of confined electronic states in ultra-thin Al{sub 0.27}Ga{sub 0.73}As/GaAs/vacuum surface quantum wells by using photoreflectance spectroscopy at room temperature. Well-resolved doublet structures were found in the spectra. The energy of the features increases with decreasing well width in agreement with the predictions of a model of the transition energy between confined electron and hole states in a surface quantum well. Both the transition broadening and intensity behaviors are also well explained by the effective mass approximation theory. The offset between the un-perturbed theoretical transition energy and the experimental data has been explained by surface-state interaction effects. Moreover, the fact that the light hole ground state in the surface quantum well can be pushed out from the surface quantum well has been directly observed experimentally.
Authors:
;  [1]
  1. Key Laboratory of Polar Materials and Devices, Ministry of Education, East China Normal University, Shanghai 200241 (China)
Publication Date:
OSTI Identifier:
22273633
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ABSORPTION SPECTROSCOPY; ALUMINIUM COMPOUNDS; APPROXIMATIONS; EFFECTIVE MASS; ELECTRONS; GALLIUM ARSENIDES; GROUND STATES; HOLES; QUANTUM WELLS; SPECTRAL REFLECTANCE; SURFACES; TEMPERATURE RANGE 0273-0400 K; X-RAY SPECTROSCOPY