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Title: High quality single crystal Ge nano-membranes for opto-electronic integrated circuitry

A thin, flat, and single crystal germanium membrane would be an ideal platform on which to mount sensors or integrate photonic and electronic devices, using standard silicon processing technology. We present a fabrication technique compatible with integrated-circuit wafer scale processing to produce membranes of thickness between 60 nm and 800 nm, with large areas of up to 3.5 mm{sup 2}. We show how the optical properties change with thickness, including appearance of Fabry-Pérot type interference in thin membranes. The membranes have low Q-factors, which allow the platforms to counteract distortion during agitation and movement. Finally, we report on the physical characteristics showing sub-nm roughness and a homogenous strain profile throughout the freestanding layer, making the single crystal Ge membrane an excellent platform for further epitaxial growth or deposition of materials.
Authors:
;  [1] ;  [2] ; ; ; ; ; ; ; ; ; ; ; ;  [3] ;  [4] ;  [5] ; ;  [6] ; more »;  [7] ;  [4] ; « less
  1. Department of Engineering, The University of Warwick, Coventry CV4 7AL (United Kingdom)
  2. (United Kingdom)
  3. Department of Physics, The University of Warwick, Coventry CV4 7AL (United Kingdom)
  4. ICN2-Institut Catala de Nanociencia i Nanotecnologia, Campus UAB, 08193 Bellaterra (Barcelona) (Spain)
  5. (Barcelona) (Spain)
  6. VTT Technical Research Centre of Finland, P.O. Box 1000, FI-02044 VTT, Espoo (Finland)
  7. Diamond Light Source, Harwell Science and Innovation Campus, Didcot, Oxfordshire OX11 0DE (United Kingdom)
Publication Date:
OSTI Identifier:
22273622
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CRYSTAL GROWTH; DEPOSITION; EPITAXY; FABRICATION; GERMANIUM; INTEGRATED CIRCUITS; LAYERS; MEMBRANES; MONOCRYSTALS; NANOSTRUCTURES; OPTICAL PROPERTIES; ROUGHNESS; SENSORS; SILICON; STRAINS; THICKNESS