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Title: Response to “Comment on ‘A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb type-II superlattices’” [J. Appl. Phys. 115, 146101 (2014)]

No abstract prepared.
Authors:
 [1] ;  [1] ;  [2] ;  [3]
  1. Research Institute for Applied Physics and Astronomy, University of Tabriz, Tabriz, 51666-14766 (Iran, Islamic Republic of)
  2. (Australia)
  3. School of Electrical, Electronic and Computer Engineering, University of Western Australia, Crawley WA 6009 (Australia)
Publication Date:
OSTI Identifier:
22273613
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRON MOBILITY; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; ROUGHNESS; SCATTERING; SUPERLATTICES; TEMPERATURE DEPENDENCE