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Title: Comment on “A study of vertical and in-plane electron mobility due to interface roughness scattering at low temperature in InAs-GaSb superlattices” [J. Appl. Phys. 114, 053712 (2013)]

The purpose of this comment is to point out that the paper by Safa, Asgari, and Faraone [J. Appl. Phys. 114, 053712 (2013)] (SAF) on electronic transport in superlattices contains a number of errors in physics and execution. By dealing with a finite number of periods and forcing the wave function to be zero at the upper and lower boundaries of the superlattice stack, SAF have turned the system into a quantum well for which the momentum along the growth axis is not a good quantum number, so that the bands in the growth direction are flat and the corresponding carrier velocities and vertical mobilities are zero. A number of other errors allow the authors to get nonzero results and to reach conclusions that qualitatively mirror those of Szmulowicz, Haugan, Elhamri, and Brown [Phys. Rev. B 84, 155307 (2011)].
Authors:
 [1]
  1. University of Dayton Research Institute, 300 College Park Ave., Dayton, Ohio 45469-0072 (United States)
Publication Date:
OSTI Identifier:
22273612
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; CHARGE CARRIERS; ELECTRON MOBILITY; GALLIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; QUANTUM WELLS; ROUGHNESS; SCATTERING; SUPERLATTICES; TEMPERATURE DEPENDENCE; WAVE FUNCTIONS