skip to main content

SciTech ConnectSciTech Connect

Title: Inter-band optoelectronic properties in quantum dot structure of low band gap III-V semiconductors

A generalized theory is developed to study inter-band optical absorption coefficient (IOAC) and material gain (MG) in quantum dot structures of narrow gap III-V compound semiconductor considering the wave-vector (k{sup →}) dependence of the optical transition matrix element. The band structures of these low band gap semiconducting materials with sufficiently separated split-off valance band are frequently described by the three energy band model of Kane. This has been adopted for analysis of the IOAC and MG taking InAs, InSb, Hg{sub 1−x}Cd{sub x}Te, and In{sub 1−x}Ga{sub x}As{sub y}P{sub 1−y} lattice matched to InP, as example of III–V compound semiconductors, having varied split-off energy band compared to their bulk band gap energy. It has been found that magnitude of the IOAC for quantum dots increases with increasing incident photon energy and the lines of absorption are more closely spaced in the three band model of Kane than those with parabolic energy band approximations reflecting the direct the influence of energy band parameters. The results show a significant deviation to the MG spectrum of narrow-gap materials having band nonparabolicity compared to the parabolic band model approximations. The results reflect the important role of valence band split-off energies in these narrow gap semiconductors.
Authors:
 [1] ;  [2] ;  [3]
  1. Electronics and Communication Engineering Department, Kalyani Government Engineering College, Kalyani 741235 (India)
  2. Physics Department, Kalyani Government Engineering College, Kalyani 741235 (India)
  3. Department of Engineering and Technological Studies, Kalyani University, Kalyani 741235 (India)
Publication Date:
OSTI Identifier:
22273605
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; ABSORPTION; ABSORPTION SPECTROSCOPY; CADMIUM TELLURIDES; COMPARATIVE EVALUATIONS; ELECTRONIC STRUCTURE; ENERGY GAP; GAIN; GALLIUM ARSENIDES; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INDIUM PHOSPHIDES; MATRIX ELEMENTS; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; VALENCE; X-RAY SPECTROSCOPY