Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices

Journal Article · Wed May 07 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4868502· OSTI ID:22273600

Takamura, Yota ^[1]; Akushichi, Taiju; Sadano, Adiyudha; Okishio, Takao; Shuto, Yusuke; Sugahara, Satoshi ^[1]

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1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)

We reexamined curve-fitting analysis for spin-accumulation signals observed in Si-channel spin-accumulation devices, employing widely-used Lorentz functions and a new formula developed from the spin diffusion equation. A Si-channel spin-accumulation device with a high quality ferromagnetic spin injector was fabricated, and its observed spin-accumulation signals were verified. Experimentally obtained Hanle-effect signals for spin accumulation were not able to be fitted by a single Lorentz function and were reproduced by the newly developed formula. Our developed formula can represent spin-accumulation signals and thus analyze Hanle-effect signals.

• OSTI ID: 22273600
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
BUILDUP
DIFFUSION EQUATIONS
FERROMAGNETIC MATERIALS
FERROMAGNETISM
SILICON
SPIN