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Title: Analysis of Hanle-effect signals observed in Si-channel spin accumulation devices

We reexamined curve-fitting analysis for spin-accumulation signals observed in Si-channel spin-accumulation devices, employing widely-used Lorentz functions and a new formula developed from the spin diffusion equation. A Si-channel spin-accumulation device with a high quality ferromagnetic spin injector was fabricated, and its observed spin-accumulation signals were verified. Experimentally obtained Hanle-effect signals for spin accumulation were not able to be fitted by a single Lorentz function and were reproduced by the newly developed formula. Our developed formula can represent spin-accumulation signals and thus analyze Hanle-effect signals.
Authors:
 [1] ;  [2] ; ; ; ; ;  [1]
  1. Imaging Science and Engineering Laboratory, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori-ku, Yokohama 226-8503 (Japan)
  2. (Japan)
Publication Date:
OSTI Identifier:
22273600
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Conference: 55. annual conference on magnetism and magnetic materials, Atlanta, GA (United States), 14-18 Nov 2010; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BUILDUP; DIFFUSION EQUATIONS; FERROMAGNETIC MATERIALS; FERROMAGNETISM; SILICON; SPIN