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Title: Modeling and experimental characterization of stepped and v-shaped (311) defects in silicon

We propose an atomistic model to describe extended (311) defects in silicon. It is based on the combination of interstitial and bond defect chains. The model is able to accurately reproduce not only planar (311) defects but also defect structures that show steps, bends, or both. We use molecular dynamics techniques to show that these interstitial and bond defect chains spontaneously transform into extended (311) defects. Simulations are validated by comparing with precise experimental measurements on actual (311) defects. The excellent agreement between the simulated and experimentally derived structures, regarding individual atomic positions and shape of the distinct structural (311) defect units, provides strong evidence for the robustness of the proposed model.
Authors:
;  [1] ; ;  [2] ;  [3] ;  [4]
  1. Departamento de Electrónica, Universidad de Valladolid, E.T.S.I. de Telecomunicación, 47011 Valladolid (Spain)
  2. Department of Materials Science and Engineering, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)
  3. Department of Engineering Physics, McMaster University, 1280 Main Street West, Hamilton, Ontario L8S 4L7 (Canada)
  4. Surrey Ion Beam Centre, University of Surrey, Guildford, Surrey GU2 7XH (United Kingdom)
Publication Date:
OSTI Identifier:
22273592
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 14; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ATOMIC MODELS; CHEMICAL BONDS; COMPARATIVE EVALUATIONS; COMPUTERIZED SIMULATION; INTERSTITIALS; MOLECULAR DYNAMICS METHOD; SILICON