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Title: Preventing light-induced degradation in multicrystalline silicon

Multicrystalline silicon (mc-Si) is currently dominating the silicon solar cell market due to low ingot costs, but its efficiency is limited by transition metals, extended defects, and light-induced degradation (LID). LID is traditionally associated with a boron-oxygen complex, but the origin of the degradation in the top of the commercial mc-Si brick is revealed to be interstitial copper. We demonstrate that both a large negative corona charge and an aluminum oxide thin film with a built-in negative charge decrease the interstitial copper concentration in the bulk, preventing LID in mc-Si.
Authors:
; ; ;  [1]
  1. Department of Micro and Nanosciences, Aalto University, Tietotie 3, 02150 Espoo (Finland)
Publication Date:
OSTI Identifier:
22273587
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM OXIDES; BORON; CONCENTRATION RATIO; COPPER; INTERSTITIALS; OXYGEN COMPLEXES; POLYCRYSTALS; SILICON; SILICON SOLAR CELLS; THIN FILMS; VISIBLE RADIATION