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Title: Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures

The electrical properties of two-dimensional hole gases (2DHGs) in GaN/AlGaN/GaN double heterostructures were investigated. The layers were grown on sapphire substrates and a high-quality bulk GaN substrate. The coexistence of 2DHG and 2D electron gases on both sides of the AlGaN layer was confirmed by Hall effect measurements at 80–460 K. It was also verified that the 2DHGs were generated by negative polarization at the undoped GaN/AlGaN interface, which did not have a doped Mg acceptor. It was also demonstrated that the 2DHG density could be controlled by varying the AlGaN layer thickness and was inversely related to the 2DHG mobility. The measured relation indicated that the 2DHG mobility is mainly limited by phonon scatterings at around room temperature. As a result, the maximum 2DHG mobility of 16 cm{sup 2}/Vs at 300 K was achieved with a density of 1 × 10{sup 13} cm{sup −2}.
Authors:
; ; ; ; ;  [1] ; ; ;  [2]
  1. Energy Technology Research Institute, National Institute of Advanced Industrial Science and Technology, Central 2, 1-1-1 Umezono, Tsukuba 305-8568 (Japan)
  2. Frontier Collaborative Research Center, Tokyo Institute of Technology, 4259 Nagatsuta-cho, Midori, Yokohama, Kanagawa 226-8503 (Japan)
Publication Date:
OSTI Identifier:
22273546
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 15; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM COMPOUNDS; DOPED MATERIALS; ELECTRICAL PROPERTIES; GALLIUM NITRIDES; HALL EFFECT; HETEROJUNCTIONS; HOLE MOBILITY; HOLES; INTERFACES; LAYERS; PHONONS; POLARIZATION; SAPPHIRE; SUBSTRATES; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0273-0400 K