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Title: Effect of interfacial layer on the crystal structure of InAs/AlAs{sub 0.16}Sb{sub 0.84}/AlSb quantum wells

Ion channeling technique using MeV C{sup 2+} ions and high resolution X-ray diffraction were used to study the crystal quality of an InAs/AlSb-based quantum wells. We found that the InAs quality has a strong dependence on the type of the interface used. With the addition of the InSb-like interface, the crystal quality of the InAs channel was greatly improved. The InAs lattice was fully strained and aligned with the lattice of the buffer layer without any lattice relaxation. On the other hand, if the interface was of the AlAs type, the lattice of the InAs quantum well was relaxed and the crystal quality was poor. This explains why a superior InAs quantum well with high electron mobility and good surface morphology can be achieved with the use of the InSb interface.
Authors:
 [1] ;  [2] ;  [1] ;  [3]
  1. Department of Electronics Engineering and Institute of Electronics, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)
  2. Center for Nano Science and Technology, National Chiao Tung University, 1001 University Road, Hsinchu 30010, Taiwan (China)
  3. (China)
Publication Date:
OSTI Identifier:
22273542
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
77 NANOSCIENCE AND NANOTECHNOLOGY; 75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM ARSENIDES; CARBON IONS; CRYSTAL STRUCTURE; CRYSTALS; ELECTRON MOBILITY; INDIUM ANTIMONIDES; INDIUM ARSENIDES; INTERFACES; ION CHANNELING; LAYERS; MEV RANGE; MORPHOLOGY; QUANTUM WELLS; RELAXATION; RESOLUTION; STRAINS; SURFACES; X-RAY DIFFRACTION