Structural and electronic characterization of 355 nm laser-crystallized silicon: Interplay of film thickness and laser fluence

Journal Article · Mon Apr 28 00:00:00 EDT 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4872464· OSTI ID:22273535

Semler, Matthew R.; Swenson, Orven F. ^[1]; Hoey, Justin M.; Guruvenket, Srinivasan; Gette, Cody R. ^[2]; Hobbie, Erik K. ^[1]

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1. Department of Physics, North Dakota State University, Fargo, North Dakota 58102 (United States)
2. Center for Nanoscale Science and Engineering, North Dakota State University, Fargo, North Dakota 58102 (United States)

We present a detailed study of the laser crystallization of amorphous silicon thin films as a function of laser fluence and film thickness. Silicon films grown through plasma-enhanced chemical vapor deposition were subjected to a Q-switched, diode-pumped solid-state laser operating at 355 nm. The crystallinity, morphology, and optical and electronic properties of the films are characterized through transmission and reflectance spectroscopy, resistivity measurements, Raman spectroscopy, X-ray diffraction, atomic force microscopy, and optical and scanning-electron microscopy. Our results reveal a unique surface morphology that strongly couples to the electronic characteristics of the films, with a minimum laser fluence at which the film properties are optimized. A simple scaling model is used to relate film morphology to conductivity in the laser-processed films.

• OSTI ID: 22273535
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
AMORPHOUS STATE
ATOMIC FORCE MICROSCOPY
CHEMICAL VAPOR DEPOSITION
CRYSTALLIZATION
DIODE-PUMPED SOLID STATE LASERS
ELECTRIC CONDUCTIVITY
ELECTRONIC STRUCTURE
LASER RADIATION
MORPHOLOGY
RAMAN SPECTROSCOPY
SCANNING ELECTRON MICROSCOPY
SILICON
SPECTRAL REFLECTANCE
SURFACES
THIN FILMS
X-RAY DIFFRACTION