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Title: Defect study in molecular beam epitaxy-grown HgCdTe films with activated and unactivated arsenic

A defect study was performed on molecular beam epitaxy-grown HgCdTe films in situ doped with arsenic. Doping was performed from either effusion cell or cracker cell, and studied were both as-grown samples and samples subjected to arsenic activation annealing. Electrical properties of the films were investigated with the use of ion milling as a means of “stirring” defects in the material. As a result of the study, it was confirmed that the most efficient incorporation of electrically active arsenic occurs at the cracking zone temperature of 700 °C. Interaction between arsenic and tellurium during the growth was observed and is discussed in the paper.
Authors:
 [1] ;  [2] ; ; ;  [3] ;  [4] ;  [2] ;  [5] ; ;  [6] ;  [7]
  1. R and D Institute for Materials SRC “Carat,” Lviv 79031 (Ukraine)
  2. (Russian Federation)
  3. A.V. Rzhanov Institute of Semiconductor Physics, Siberian Branch of the Russian Academy of Sciences, Novosibirsk 630090 (Russian Federation)
  4. Ioffe Physical-Technical Institute of the Russian Academy of Sciences, St. Petersburg 194021 (Russian Federation)
  5. P. Sahaydachnyi Army Academy, Lviv 79012 (Ukraine)
  6. Center of Microelectronics and Nanotechnology, Rzeszów University, Rzeszów 35-310 (Poland)
  7. National Research Tomsk State University, Tomsk 634050 (Russian Federation)
Publication Date:
OSTI Identifier:
22273533
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ANNEALING; ARSENIC; CADMIUM TELLURIDES; CRYSTAL DEFECTS; DIFFUSION; DOPED MATERIALS; ELECTRICAL PROPERTIES; MERCURY COMPOUNDS; MOLECULAR BEAM EPITAXY; THIN FILMS