Photo-induced change of dielectric response in BaCoSiO{sub 4} stuffed tridymite
Journal Article
·
· Journal of Applied Physics
- Department of Physics, Nagoya University, Nagoya 464-8602 (Japan)
- Nanostructures Research Laboratory, Japan Fine Ceramics Center, Nagoya 456-8587 (Japan)
- Materials and Structures Laboratory, Tokyo Institute of Technology, Yokohama 226-8503 (Japan)
The photodielectric effect is demonstrated in Mott-insulator BaCoSiO{sub 4} with a stuffed-tridymite-type structure under irradiation of visible light at 365 nm. The real part of dielectric permittivity is enhanced by ∼300% with little increase of tan δ in a low-frequency region. Results of diffuse reflectance spectroscopy, first-principles calculations and dielectric measurements suggest that the photodielectric effect stems from a response of photo-excited electrons in an unoccupied upper-Hubbard band for 3d-orbitals of cobalt, which have significantly small mobility due to the unique configuration of Co ions in the stuffed-tridymite-type structure.
- OSTI ID:
- 22273524
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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