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Title: Effect of Cu doping on the resistive switching of NiO thin films

Bipolar resistive switching is observed in the GaIn/Cu:NiO film/ITO device with active layer deposited by sol-gel spin-coating. The first-principles calculations indicate that Cu dopants with valence of +1 are located at the substitutional Ni sites rather than the interstitial ones. Cu doping introduces more oxygen vacancies in the film and increases the carrier mobility, however, excessive Cu dopants may assemble at the grain boundary resulting in larger set voltage. Current–voltage measurements indicate that the trap charge limited and space charge limited conduction dominate the high resistance state, while the low resistance state follows the Ohmic mechanism. The switching is attributed to the formation/rupture of oxygen vacancy filaments.
Authors:
; ;  [1]
  1. Vacuum and Fluid Engineering Research Center, Northeastern University, Shenyang 110819 (China)
Publication Date:
OSTI Identifier:
22273515
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CARRIER MOBILITY; COPPER COMPOUNDS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC POTENTIAL; GAIN; GRAIN BOUNDARIES; NICKEL OXIDES; OXYGEN; SOL-GEL PROCESS; SPACE CHARGE; SPIN-ON COATING; THIN FILMS; TRAPS; VACANCIES; VALENCE