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Title: Simulation and characterization of millimeter-wave InAlN/GaN high electron mobility transistors using Lombardi mobility model

A gate length of 0.2 μm InAlN/GaN high electron mobility transistor on SiC substrate is obtained with a maximum current gain cutoff frequency (f{sub T}) of 65.8 GHz and a maximum power gain cutoff frequency (f{sub max}) of 143.6 GHz. Lombardi model, which takes interface roughness scattering into consideration, has been introduced to model the transconductance (g{sub m}) degradation. The simulated g{sub m} and f{sub T} with Lombardi model are 69% and 58% lower than the ones without considering interface roughness scattering, respectively. Further analysis show experimental g{sub m}, gate capacitance (C{sub g}), and f{sub T} are consistent with results based on Lombardi model.
Authors:
; ; ;  [1] ; ;  [2]
  1. State Key Laboratory of Electronic Thin Films and Integrated Devices, University of Electronic Science and Technology of China, Chengdu 610054 (China)
  2. Science and Technology of ASIC Lab, Hebei Semiconductor Research Institute, Shijiazhuang 050051 (China)
Publication Date:
OSTI Identifier:
22273509
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ALUMINIUM NITRIDES; CAPACITANCE; COMPUTERIZED SIMULATION; ELECTRIC CONDUCTIVITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; GAIN; GALLIUM NITRIDES; HETEROJUNCTIONS; INDIUM COMPOUNDS; INTERFACES; ROUGHNESS; SILICON CARBIDES; SUBSTRATES; TRANSISTORS