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Title: Nonlinear photoresponse of field effect transistors terahertz detectors at high irradiation intensities

Terahertz power dependence of the photoresponse of field effect transistors, operating at frequencies from 0.1 to 3 THz for incident radiation power density up to 100 kW/cm{sup 2} was studied for Si metal–oxide–semiconductor field-effect transistors and InGaAs high electron mobility transistors. The photoresponse increased linearly with increasing radiation intensity up to the kW/cm{sup 2} range. Nonlinearity followed by saturation of the photoresponse was observed for all investigated field effect transistors for intensities above several kW/cm{sup 2}. The observed photoresponse nonlinearity is explained by nonlinearity and saturation of the transistor channel current. A theoretical model of terahertz field effect transistor photoresponse at high intensity was developed. The model explains quantitative experimental data both in linear and nonlinear regions. Our results show that dynamic range of field effect transistors is very high and can extend over more than six orders of magnitudes of power densities (from ∼0.5 mW/cm{sup 2} to ∼5 kW/cm{sup 2})
Authors:
 [1] ;  [2] ; ;  [3] ; ;  [4] ;  [1] ;  [5] ;  [6] ;  [1] ;  [7]
  1. UMR 5221 CNRS, Université Montpellier 2, Montpellier 34095 (France)
  2. (Ukraine)
  3. Terahertz Center, University of Regensburg, Regensburg 93040 (Germany)
  4. V. E. Lashkaryov Institute of Semiconductor Physics, National Academy of Sciences of Ukraine, Kiev, 03028 (Ukraine)
  5. Helmholtz Zentrum Dresden Rossendorf, Institute of Ion Beam Physics and Materials Research, Dresden 01314 (Germany)
  6. Rensselaer Polytechnic Institute, Troy, New York 12180 (United States)
  7. (Poland)
Publication Date:
OSTI Identifier:
22273498
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRON MOBILITY; GALLIUM ARSENIDES; INDIUM ARSENIDES; IRRADIATION; MOSFET; NONLINEAR PROBLEMS; POWER DENSITY; SILICON; THZ RANGE