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Title: A microstructural approach toward the effect of thickness on semiconductor-to-metal transition characteristics of VO{sub 2} epilayers

We report the control of semiconductor to metal transition in VO{sub 2}(010) epilayers integrated with Si(100) substrates buffered with an NiO[111]/YSZ[100] intermediate layer. VO{sub 2} epitaxial thin films were grown at different thicknesses varying from 10 to 200 nm using pulsed laser deposition technique. An epitaxial relationship of VO{sub 2}(010)‖NiO(111)‖ YSZ(001)‖Si(001) and VO{sub 2}[100]‖NiO[110]‖ YSZ[100]‖Si[100] was established at room temperature. The crystallographic alignment across the VO{sub 2}/NiO interface changes to VO{sub 2}(100)‖NiO(111) and VO{sub 2}[001]‖NiO[110] at the temperature of growth giving rise to a misfit strain of about 33.5% and 3.0% along two orthogonal in-plane orientations. The transition temperature was observed to vary from about 353 to 341 K, the transition amplitude increased by about five orders of magnitude, and the hysteresis decreased to about 3 K, as the thickness of VO{sub 2} layers increased from about 10 to 200 nm. These observations were explained based on strain characteristics, overall defect content and grain boundaries, and phenomenological thermodynamic models.
Authors:
; ;  [1] ;  [2]
  1. Department of Materials Science and Engineering, North Carolina State University, EB-1, Raleigh, North Carolina 27695-7907 (United States)
  2. Intel Corporation, IMO-SC, SC2, Santa Clara, California 95054 (United States)
Publication Date:
OSTI Identifier:
22273494
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CRYSTAL STRUCTURE; ENERGY BEAM DEPOSITION; EPITAXY; GRAIN BOUNDARIES; INTERFACES; LASER RADIATION; LAYERS; NICKEL OXIDES; PHASE TRANSFORMATIONS; PULSED IRRADIATION; SEMICONDUCTOR MATERIALS; SILICON; STRAINS; SUBSTRATES; THICKNESS; THIN FILMS; TRANSITION TEMPERATURE; VANADIUM OXIDES; YTTRIUM OXIDES; ZIRCONIUM OXIDES