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Title: Effect of growth temperature on ballistic electron transport through the Au/Si(001) interface

Ballistic electron emission spectroscopy was used to investigate electron transport through Au/Si(001) Schottky diodes grown at 35 °C and 22 °C. Aside from a decreased Schottky height, this small increase in temperature introduced an energy dependent scattering component, which was absent in the samples grown at 22 °C. These differences may be attributed to the increased amount of Au-Si intermixing at the interface. Despite the non-epitaxial nature of the growth technique, strong evidence was found in both sets of samples that indicated the presence of a forward-focused current subject to some degree of parallel momentum conservation at the interface. This evidence was present in all samples grown at 35 °C, but was only observed in those samples grown at 22 °C when the Au films were 10 nm or thicker. This sensitivity to growth temperature could account for discrepancies in previous studies on Au/Si(001)
Authors:
; ;  [1]
  1. Department of Physics, University of Northern Iowa, 215 Begeman Hall, Cedar Falls, Iowa 50614-0150 (United States)
Publication Date:
OSTI Identifier:
22273490
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 16; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CURRENTS; ELECTRON EMISSION; ELECTRON SPECTROSCOPY; ELECTRONS; EMISSION SPECTROSCOPY; ENERGY DEPENDENCE; EPITAXY; GOLD; INTERFACES; SCHOTTKY BARRIER DIODES; SILICON; TEMPERATURE DEPENDENCE; THIN FILMS