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Title: Band to band tunneling in III-V semiconductors: Implications of complex band structure, strain, orientation, and off-zone center contribution

In this paper, we use a tight binding Hamiltonian with spin orbit coupling to study the real and complex band structures of relaxed and strained GaAs. A simple d orbital on-site energy shift coupled with appropriate scaling of the off-diagonal terms is found to correctly reproduce the band-edge shifts with strain. Four different 〈100〉 strain combinations, namely, uniaxial compressive, uniaxial tensile, biaxial compressive, and biaxial tensile strain are studied, revealing rich valence band structure and strong relative orientation dependent tunneling. It is found that complex bands are unable to provide unambiguous tunneling paths away from the Brillouin zone center. Tunneling current density distribution over the Brillouin zone is computed using non-equilibrium Green's function approach elucidating a physical picture of band to band tunneling.
Authors:
 [1]
  1. SEMATECH, 257 Fuller Road, STE 2200, Albany, New York 12203 (United States)
Publication Date:
OSTI Identifier:
22273480
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; BRILLOUIN ZONES; CRYSTAL STRUCTURE; CURRENT DENSITY; ELECTRONIC STRUCTURE; GALLIUM ARSENIDES; GREEN FUNCTION; HAMILTONIANS; L-S COUPLING; ORIENTATION; SEMICONDUCTOR MATERIALS; STRAINS; TUNNEL EFFECT; VALENCE