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Title: Delay time and Hartman effect in strain engineered graphene

Tunneling times, including group delay and dwell time, are studied for massless Dirac electrons transmitting through a one-dimensional barrier in strain-engineered graphene. The Hartman effect, the independence of group delay on barrier length, is induced by the strain effect, and associated with the transmission gap and the evanescent mode. The influence of barrier height/length and strain modulus/direction on the group delay is also discussed, which provides the flexibility to control the group delay with applications in graphene-based devices. The relationship between group delay and dwell time is finally derived to clarify the nature of the Hartman effect.
Authors:
;  [1] ;  [2]
  1. Department of Physics, Shanghai University, 200444 Shanghai (China)
  2. Department of Electronic Information Materials, Shanghai University, 200444 Shanghai (China)
Publication Date:
OSTI Identifier:
22273469
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; ELECTRONS; GRAPHENE; STRAINS; TIME DELAY; TUNNEL EFFECT