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Title: 1.5 MeV proton irradiation effects on electrical and structural properties of TiO{sub 2}/n-Si interface

In this paper, we report the effect of 1.5 MeV proton beam irradiation dose on the structural and electrical properties of TiO{sub 2} thin films deposited on n–Si substrates. The formation and transformation of different TiO{sub 2} phases in the irradiated thin films were characterized by X-ray diffraction and X-ray photoelectron spectroscopy (XPS). X-ray diffraction measurements revealed that the as grown film was rich in Ti{sub 5}O{sub 9} phase and then converted to mixed phases of TiO{sub 2} (rutile and anatase) after exposure with radiation doses up to 5 × 10{sup 14} cm{sup −2}. The XPS results revealed the formation of oxygen vacancy (negative) traps in the exposed TiO{sub 2} films, which showed strong dependence on the dose. The C-V measurements showed that proton radiations also damaged the Si substrate and created deep level defects in the substrate, which caused a shift of 0.26 ± 0.01 V in the flat band voltage (V{sub FB}). I–V measurements showed that the ideality factor increased and the rectification ratio dropped with the increase in the radiation dose. The present study showed the stability of TiO{sub 2}/Si interface and TiO{sub 2} film as an oxide layer against proton radiations.
Authors:
; ; ; ; ;  [1] ;  [2] ; ;  [3]
  1. Centre for Micro and Nano Devices, Department of Physics, COMSATS Institute of Information Technology, Islamabad 44000 (Pakistan)
  2. Accelerator Group, National Center for Physics, Islamabad (Pakistan)
  3. CNR-IOM, Laboratorio TASC, StradaStatale 14, Km 163.5, I-34149 Trieste (Italy)
Publication Date:
OSTI Identifier:
22273451
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; ELECTRIC CONDUCTIVITY; INDIUM; INTERFACES; IRRADIATION; LAYERS; PHASE STABILITY; PHYSICAL RADIATION EFFECTS; PROTON BEAMS; RADIATION DOSES; SILICON; SUBSTRATES; THIN FILMS; TITANIUM OXIDES; VACANCIES; X-RAY DIFFRACTION; X-RAY PHOTOELECTRON SPECTROSCOPY