Resonant indirect excitation of Gd{sup 3+} in AlN thin films
- Department of Electrical and Electronic Engineering, Graduate School of Engineering, Kobe University, 1-1 Rokkodai, Nada, Kobe 657-8501 (Japan)
- YUMEX INC., 400 Itoda, Yumesaki, Himeji, Hyogo 671-2114 (Japan)
- Hyogo Prefectural Institute of Technology, 3-1-12 Yukihira, Suma, Kobe 654-0037 (Japan)
We studied the efficient indirect excitation of Gd{sup 3+} ions in AlN thin films. C-axis oriented polycrystalline thin films of Al{sub 0.997}Gd{sub 0.003}N/AlN were grown on fused silica substrates using a reactive radio-frequency magnetron sputtering technique. The intra-orbital electron transition in Gd{sup 3+} showed a narrow luminescence line at 3.9 eV. The photoluminescence (PL) excitation (PLE) spectrum exhibited a peak originating from efficient indirect energy transfer from the band edge of AlN to Gd{sup 3+} ions. The PLE peak shifted and the PL intensity showed a dramatic change when the AlN band gap was varied by changing the temperature. Energy scanning performed by changing the band-gap energy of AlN with temperature revealed several resonant channels of energy transfer into the higher excited states of Gd{sup 3+}.
- OSTI ID:
- 22273448
- Journal Information:
- Journal of Applied Physics, Vol. 115, Issue 17; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
- Country of Publication:
- United States
- Language:
- English
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