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Title: An original method to evaluate the transport parameters and reconstruct the electric field in solid-state photodetectors

A method for reconstructing the spatial profile of the electric field along the thickness of a generic bulk solid-state photodetector is proposed. Furthermore, the mobility and lifetime of both electrons and holes can be evaluated contextually. The method is based on a procedure of minimization built up from current transient profiles induced by laser pulses in a planar detector at different applied voltages. The procedure was tested in CdTe planar detectors for X- and Gamma rays. The devices were measured in a single-carrier transport configuration by impinging laser light on the sample cathode. This method could be suitable for many other devices provided that they are made of materials with sufficiently high resistivity, i.e., with a sufficiently low density of intrinsic carriers.
Authors:
;  [1] ; ;  [1] ;  [2] ; ;  [3]
  1. DiFeST, Department of Physics and Earth Sciences, University of Parma, Parco Area delle Scienze 7/A, 43124 Parma (Italy)
  2. (Italy)
  3. IMM-CNR, Institute for Microelectronics and Microsystems, Via Monteroni, 73100 Lecce (Italy)
Publication Date:
OSTI Identifier:
22273432
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; CADMIUM TELLURIDES; ELECTRIC FIELDS; ELECTRONS; GAMMA RADIATION; LASERS; PHOTODETECTORS; SOLIDS