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Title: Stark shift and field ionization of arsenic donors in {sup 28}Si-silicon-on-insulator structures

We develop an efficient back gate for silicon-on-insulator (SOI) devices operating at cryogenic temperatures and measure the quadratic hyperfine Stark shift parameter of arsenic donors in isotopically purified {sup 28}Si-SOI layers using such structures. The back gate is implemented using MeV ion implantation through the SOI layer forming a metallic electrode in the handle wafer, enabling large and uniform electric fields up to 2 V/μm to be applied across the SOI layer. Utilizing this structure, we measure the Stark shift parameters of arsenic donors embedded in the {sup 28}Si-SOI layer and find a contact hyperfine Stark parameter of η{sub a} = −1.9 ± 0.7 × 10{sup −3} μm{sup 2}/V{sup 2}. We also demonstrate electric-field driven dopant ionization in the SOI device layer, measured by electron spin resonance.
Authors:
;  [1] ;  [2] ;  [3] ;  [1] ;  [2] ; ;  [4] ; ;  [5] ; ;  [6] ;  [7]
  1. London Centre for Nanotechnology, University College London, London WC1H 0AH (United Kingdom)
  2. (United Kingdom)
  3. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
  4. Accelerator and Fusion Research Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720 (United States)
  5. Department of Electrical Engineering, Princeton University, Princeton, New Jersey 08544 (United States)
  6. RUBION, Ruhr-Universitaet Bochum, Bochum (Germany)
  7. Department of Electrical Engineering and Computer Sciences, University of California, Berkeley, California 94720 (United States)
Publication Date:
OSTI Identifier:
22273431
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ARSENIC; ELECTRIC FIELDS; ELECTRON SPIN RESONANCE; ION IMPLANTATION; IONIZATION; LAYERS; SILICON; SILICON 28