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Title: Ballistic electron transport calculation of strained germanium-tin fin field-effect transistors

The dependence of ballistic electron current on Sn content, sidewall orientations, fin width, and uniaxial stress is theoretically studied for the GeSn fin field-effect transistors. Alloying Sn increases the direct Γ valley occupancy and enhances the injection velocity at virtual source node. (112{sup ¯}) sidewall gives the highest current enhancement due to the rapidly increasing Γ valley occupancy. The non-parabolicity of the Γ valley affects the occupancy significantly. However, uniaxial tensile stress and the shrinkage of fin width reduce the Γ valley occupancy, and the currents are enhanced by increasing occupancy of specific indirect L valleys with high injection velocity.
Authors:
 [1] ;  [1] ;  [2]
  1. Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University, Taipei, Taiwan (China)
  2. (China)
Publication Date:
OSTI Identifier:
22273426
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRONS; FIELD EFFECT TRANSISTORS; GERMANIUM; TIN