skip to main content

Title: Domain switching of fatigued ferroelectric thin films

We investigate the domain wall speed of a ferroelectric PbZr{sub 0.48}Ti{sub 0.52}O{sub 3} (PZT) thin film using an atomic force microscope incorporated with a mercury-probe system to control the degree of electrical fatigue. The depolarization field in the PZT thin film decreases with increasing the degree of electrical fatigue. We find that the wide-range activation field previously reported in ferroelectric domains result from the change of the depolarization field caused by the electrical fatigue. Domain wall speed exhibits universal behavior to the effective electric field (defined by an applied electric field minus the depolarization field), regardless of the degree of the electrical fatigue.
Authors:
 [1] ;  [2] ;  [3]
  1. Department of Materials Science and Engineering, Pohang University of Science and Technology (POSTECH), Pohang 790-784 (Korea, Republic of)
  2. Department of Applied Physics, College of Applied Science, Kyung Hee University, Suwon 446-701 (Korea, Republic of)
  3. Department of Physics and EHSRC, University of Ulsan, Ulsan 680-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22273419
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ATOMIC FORCE MICROSCOPY; DEPOLARIZATION; ELECTRIC FIELDS; FATIGUE; FERROELECTRIC MATERIALS; PZT; THIN FILMS