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Title: Band alignment and electrical properties of Al{sub 2}O{sub 3}/β-Ga{sub 2}O{sub 3} heterojunctions

The band alignment of Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} was investigated by x-ray photoelectron spectroscopy (XPS). With a band gap of 6.8 ± 0.2 eV measured for Al{sub 2}O{sub 3}, the conduction and valence band offsets at the interface were estimated to be 1.5 ± 0.2 eV and 0.7 ± 0.2 eV, respectively. The conduction band offset was also obtained from tunneling current in Al{sub 2}O{sub 3}/n-Ga{sub 2}O{sub 3} (2{sup ¯}01) metal-oxide-semiconductor (MOS) diodes using the Fowler-Nordheim model. The electrically extracted value was in good agreement with the XPS data. Furthermore, the MOS diodes exhibited small capacitance-voltage hysteresis loops, indicating the successful engineering of a high-quality Al{sub 2}O{sub 3}/Ga{sub 2}O{sub 3} interface.
Authors:
; ; ;  [1] ;  [2] ;  [3] ; ;  [2] ;  [4]
  1. National Institute of Information and Communications Technology, 4–2–1 Nukui-Kitamachi, Koganei, Tokyo 184–8795 (Japan)
  2. Tamura Corporation, 2–3–1 Hirosedai, Sayama, Saitama 350–1328 (Japan)
  3. (Japan)
  4. Koha Co., Ltd., 2–6–8 Kouyama, Nerima, Tokyo 176–0022 (Japan)
Publication Date:
OSTI Identifier:
22273416
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ALUMINIUM OXIDES; CAPACITANCE; GALLIUM OXIDES; HETEROJUNCTIONS; SILICON OXIDES; TUNNEL EFFECT; X-RAY PHOTOELECTRON SPECTROSCOPY