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Title: Effect of La{sup 3+} substitution with Gd{sup 3+} on the resistive switching properties of La{sub 0.7}Sr{sub 0.3}MnO{sub 3} thin films

This study demonstrated that the resistive switching voltage of perovskite manganite material could be controlled by A-site cation substitution in “A” MnO{sub 3} perovskite manganite structure. A partial substitution of La{sup 3+} in La{sub 0.7}Sr{sub 0.3}MnO{sub 3} with smaller cation Gd{sup 3+} induced A-site vacancy of the largest Sr{sup 2+} cation with surface segregation of SrO{sub y} due to ionic size mismatch, and the induced vacancies reduced migration energy barrier. The operating voltage decreased from 3.5 V to 2.5 V due to a favorable condition for electrochemical migration and redox of oxygen ions. Moreover, surface-segregated SrO{sub y} was enhanced with Gd-substitution and the SrO{sub y} reduced Schottky-like barrier height and resistive switching ratio from the potential drop and screening effect. The relationship between A-site vacancy generation resulting in surface segregation of SrO{sub y} and resistive switching behavior was also investigated by energy resolved x-ray photoelectron spectroscopy, O 1s near edge x-ray absorption spectroscopy, and current voltage measurement.
Authors:
; ;  [1]
  1. Department of Materials Science and Engineering, Yonsei University, 50 Yonsei-ro, Seodaemun-gu, Seoul 120-749 (Korea, Republic of)
Publication Date:
OSTI Identifier:
22273413
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ABSORPTION SPECTROSCOPY; GADOLINIUM IONS; LANTHANUM IONS; MANGANESE OXIDES; PEROVSKITE; STRONTIUM OXIDES; THIN FILMS; VACANCIES; X-RAY PHOTOELECTRON SPECTROSCOPY