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Title: Exciton-dominant electroluminescence from a diode of monolayer MoS{sub 2}

In two-dimensional monolayer MoS{sub 2}, excitons dominate the absorption and emission properties. However, the low electroluminescent efficiency and signal-to-noise ratio limit our understanding of the excitonic behavior of electroluminescence. Here, we study the microscopic origin of the electroluminescence from a diode of monolayer MoS{sub 2} fabricated on a heavily p-type doped silicon substrate. Direct and bound-exciton related recombination processes are identified from the electroluminescence. At a high electron-hole pair injection rate, Auger recombination of the exciton-exciton annihilation of the bound exciton emission is observed at room temperature. Moreover, the efficient electrical injection demonstrated here allows for the observation of a higher energy exciton peak of 2.255‚ÄČeV in the monolayer MoS{sub 2} diode, attributed to the excited exciton state of a direct-exciton transition.
Authors:
; ; ; ;  [1] ; ; ;  [1] ;  [2]
  1. NSF Nanoscale Science and Engineering Center, University of California, 3112 Etcheverry Hall, Berkeley, California 94720 (United States)
  2. (United States)
Publication Date:
OSTI Identifier:
22273408
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; ELECTROLUMINESCENCE; EXCITONS; MOLYBDENUM SULFIDES