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Title: A silicon nanocrystal tunnel field effect transistor

In this work, we demonstrate a silicon nanocrystal Field Effect Transistor (ncFET). Its operation is similar to that of a Tunnelling Field Effect Transistor (TFET) with two barriers in series. The tunnelling barriers are fabricated in very thin silicon dioxide and the channel in intrinsic polycrystalline silicon. The absence of doping eliminates the problem of achieving sharp doping profiles at the junctions, which has proven a challenge for large-scale integration and, in principle, allows scaling down the atomic level. The demonstrated ncFET features a 10{sup 4} on/off current ratio at room temperature, a low 30 pA/μm leakage current at a 0.5 V bias, an on-state current on a par with typical all-Si TFETs and bipolar operation with high symmetry. Quantum dot transport spectroscopy is used to assess the band structure and energy levels of the silicon island.
Authors:
 [1] ;  [2] ;  [3] ;  [4] ;  [3] ;  [1] ;  [5]
  1. Département de Physique, Université de Sherbrooke, 2500 Boulevard de l'Université, Sherbrooke, Quebec J1K 2R1 (Canada)
  2. (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, Quebec J1K 0A5 (Canada)
  3. (LN2)–CNRS UMI-3463, Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, Quebec J1K 0A5 (Canada)
  4. Institut Interdisciplinaire d'Innovation Technologique (3IT), Université de Sherbrooke, 3000 Boulevard de l'Université, Sherbrooke, Quebec J1K 0A5 (Canada)
  5. (CIFAR), Toronto, Ontario M5G 1Z8 (Canada)
Publication Date:
OSTI Identifier:
22273406
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; FIELD EFFECT TRANSISTORS; POLYCRYSTALS; QUANTUM DOTS; SILICON; SILICON OXIDES; TUNNEL EFFECT