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Title: Fullerene film on metal surface: Diffusion of metal atoms and interface model

We try to understand the fact that fullerene film behaves as n-type semiconductor in electronic devices and establish a model describing the energy level alignment at fullerene/metal interfaces. The C{sub 60}/Ag(100) system was taken as a prototype and studied with photoemission measurements. The photoemission spectra revealed that the Ag atoms of the substrate diffused far into C{sub 60} film and donated electrons to the molecules. So the C{sub 60} film became n-type semiconductor with the Ag atoms acting as dopants. The C{sub 60}/Ag(100) interface should be understood as two sub-interfaces on both sides of the molecular layer directly contacting with the substrate. One sub-interface is Fermi level alignment, and the other is vacuum level alignment.
Authors:
; ;  [1] ;  [2] ;  [3] ; ; ; ;  [4]
  1. Department of Physics, Zhejiang University, Hangzhou 310027 (China)
  2. Department of Applied Physics, Shandong University of Science and Technology, Qingdao 266590 (China)
  3. College of Science, Nanjing University of Science and Technology, Nanjing 210094 (China)
  4. Laboratory of Synchrotron Radiation, Institute of High Energy Physics, Chinese Academy of Sciences, Beijing 100039 (China)
Publication Date:
OSTI Identifier:
22273399
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; DOPED MATERIALS; FERMI LEVEL; FULLERENES; LAYERS; PHOTOEMISSION; SEMICONDUCTOR MATERIALS; SILVER