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Title: Graphene nanoribbon superlattices fabricated via He ion lithography

Single-step nano-lithography was performed on graphene sheets using a helium ion microscope. Parallel “defect” lines of ∼1 μm length and ≈5 nm width were written to form nanoribbon gratings down to 20 nm pitch. Polarized Raman spectroscopy shows that crystallographic orientation of the nanoribbons was partially maintained at their lateral edges, indicating a high-fidelity lithography process. Furthermore, Raman analysis of large exposure areas with different ion doses reveals that He ions produce point defects with radii ∼ 2× smaller than do Ga ions, demonstrating that scanning-He{sup +}-beam lithography can texture graphene with less damage.
Authors:
 [1] ;  [1] ;  [2] ;  [1] ;  [2] ;  [3] ;  [3] ;  [4] ;  [1] ;  [2] ;  [5] ;  [6]
  1. Divisão de Metrologia de Materiais, Instituto Nacional de Metrologia, Qualidade e Tecnologia (INMETRO), Duque de Caxias, RJ 25250-020 (Brazil)
  2. (Brazil)
  3. Hewlett-Packard Laboratories, 1501 Page Mill Road, Palo Alto, California 94304 (United States)
  4. (China)
  5. Departamento de Física, Universidade Federal de Minas Gerais, Belo Horizonte, MG 30123-970 (Brazil)
  6. (United States)
Publication Date:
OSTI Identifier:
22273394
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 19; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; CRYSTALLOGRAPHY; GALLIUM IONS; GRAPHENE; GRATINGS; HELIUM IONS; NANOSTRUCTURES; POINT DEFECTS; RAMAN SPECTROSCOPY