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Title: Chemical and electronic passivation of 4H-SiC surface by hydrogen-nitrogen mixed plasma

We propose a low-temperature electron cyclotron resonance microwave hydrogen-nitrogen mixed plasma treatment method for passivating 4H-SiC surface and investigate the effects of treatment on the structural, chemical, and electronic properties of the surface. The results indicate that the method is highly controllable and could result in an atomically ordered, unreconstructed, smooth, and clean SiC surface. The absence of surface band bending is indicative of an electronically passivated SiC surface with a surface state density as low as 5.47 × 10{sup 10} cm{sup −2}. This effect could be attributed to the simultaneous effects of H and N passivating on SiC surface.
Authors:
; ; ;  [1] ;  [2]
  1. School of Electronic Science and Technology, Faculty of Electronic Information and Electrical Engineering, Dalian University of Technology, Dalian 116024 (China)
  2. State Key Laboratory of Material Modification by Laser, Ion and Electron Beam (Ministry of Education), Dalian University of Technology, Dalian 116024 (China)
Publication Date:
OSTI Identifier:
22273378
Resource Type:
Journal Article
Resource Relation:
Journal Name: Applied Physics Letters; Journal Volume: 104; Journal Issue: 20; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
36 MATERIALS SCIENCE; ELECTRON CYCLOTRON-RESONANCE; HYDROGEN 4; MICROWAVE RADIATION; NITROGEN; PASSIVATION; SILICON CARBIDES; SURFACES