Electrical switching in a Fe-thiacrown molecular device

Journal Article · Tue Jan 07 00:00:00 EST 2014 · Journal of Applied Physics

DOI:https://doi.org/10.1063/1.4859755· OSTI ID:22271308

Lan, J.; Hao, H.; Wang, X. L.; Shi, X. Q. ^[1]

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1. Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031 (China)

First-principles calculations are performed to inspect the electronic and transport properties of a Fe-thiacrown molecular device, namely, a Au-Fe(9S{sub 3}){sub 2}-Au junction. It is found that the junction has a low-spin (LS) ground state and a high-spin (HS) metastable state. Further study shows that the HS state is a conducting state while the LS state is a nearly insulating one, which means that a switch between these two spin configurations results in a good electrical switching behavior and can serve as an ON/OFF state for a logic unit. Thus, it may find applications as switches or memories in molecular electronic circuits.

• OSTI ID: 22271308
• Journal Information: Journal of Applied Physics, Vol. 115, Issue 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA); ISSN 0021-8979
• Country of Publication: United States
• Language: English

Related Subjects

75 CONDENSED MATTER PHYSICS
SUPERCONDUCTIVITY AND SUPERFLUIDITY
ELECTRIC CONDUCTIVITY
GOLD
GROUND STATES
HETEROJUNCTIONS
INTERFACES
IRON COMPOUNDS
LOGIC CIRCUITS
METASTABLE STATES
ORGANIC COMPOUNDS
SPIN