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Title: Dielectric strength of voidless BaTiO{sub 3} films with nano-scale grains fabricated by aerosol deposition

In order to investigate the dielectric strength properties of the BaTiO{sub 3} films with nano-scale grains with uniform grain size and no voids, BaTiO{sub 3} films were fabricated with a thickness of 1 μm by an AD process, and the fabricated films were sintered at 800, 900, and 1000 °C in air and reducing atmosphere. The films have superior dielectric strength properties due to their uniform grain size and high density without any voids. In addition, based on investigation of the leakage current (intrinsic) properties, it was confirmed that the sintering conditions of the reducing atmosphere largely increase leakage currents due to generated electrons and doubly ionized oxygen vacancies following the Poole-Frenkel emission mechanism, and increased leakage currents flow at grain boundary regions. Therefore, we conclude that the extrinsic breakdown factors should be eliminated for superior dielectric strength properties, and it is important to enhance grain boundaries by doping acceptors and rare-earth elements.
Authors:
;  [1] ;  [1] ;  [2] ; ;  [3] ;  [4] ;  [5]
  1. Department of Electronics Materials Engineering, Kwangwoon University, Seoul (Korea, Republic of)
  2. (Korea, Republic of)
  3. Department of Nano and Electronic Physics, Kookmin University, Seoul (Korea, Republic of)
  4. R and D Center, Samwha Capacitor, Yongin (Korea, Republic of)
  5. Department of Ceramic Engineering, Engineering Research Institute, Gyeongsang National University, Jinju (Korea, Republic of)
Publication Date:
OSTI Identifier:
22271293
Resource Type:
Journal Article
Resource Relation:
Journal Name: Journal of Applied Physics; Journal Volume: 115; Journal Issue: 1; Other Information: (c) 2014 AIP Publishing LLC; Country of input: International Atomic Energy Agency (IAEA)
Country of Publication:
United States
Language:
English
Subject:
75 CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; 77 NANOSCIENCE AND NANOTECHNOLOGY; DEPOSITION; DIELECTRIC MATERIALS; ELECTRONS; GRAIN BOUNDARIES; GRAIN SIZE; LEAKAGE CURRENT; NANOSTRUCTURES; RARE EARTHS; SINTERING; TEMPERATURE DEPENDENCE; THIN FILMS; TITANATES; VACANCIES